DesertFox
11-12-2007, 07:24 PM
The chip industry's unrelenting quest to build smaller, faster microchips has taken another step forward.
Chip maker Intel has launched a range of processors, known as Penryn, which will power the next generation of PCs.
The tiny chips contain a novel material and have features just 45 nanometres (billionths of a metre) wide.
The only PC processor in the line-up of 16 chips packs 820 million of the tiny switches into an area little bigger than a postage stamp.
"Had we used the same transistors that we used in our chips 15 to 20 years ago, the chip would be about the size of a two-story building," said Bill Kircos of Intel. ...
In the latest generation of Intel chips, critical elements of the transistors, known as gate dielectrics, do not perform as well.
As a result, currents passing through the transistors leak, reducing the effectiveness of the chip.
To overcome this, Intel has replaced the gate dielectrics, previously made from silicon dioxide, with a material based on the metal hafnium.
Hafnium is a so-called high-K material, which refers to its dielectric constant, and has a greater ability to store electrical charge than silicon dioxide.
The exact recipe for the new material has not been revealed but Intel says that it offers greater performance at such tiny scales.
Intel co-founder Gordon Moore has described the inclusion of hafnium as "one of the biggest transistor advancements in 40 years".
More (http://news.bbc.co.uk/2/hi/technology/7085480.stm)
Chip maker Intel has launched a range of processors, known as Penryn, which will power the next generation of PCs.
The tiny chips contain a novel material and have features just 45 nanometres (billionths of a metre) wide.
The only PC processor in the line-up of 16 chips packs 820 million of the tiny switches into an area little bigger than a postage stamp.
"Had we used the same transistors that we used in our chips 15 to 20 years ago, the chip would be about the size of a two-story building," said Bill Kircos of Intel. ...
In the latest generation of Intel chips, critical elements of the transistors, known as gate dielectrics, do not perform as well.
As a result, currents passing through the transistors leak, reducing the effectiveness of the chip.
To overcome this, Intel has replaced the gate dielectrics, previously made from silicon dioxide, with a material based on the metal hafnium.
Hafnium is a so-called high-K material, which refers to its dielectric constant, and has a greater ability to store electrical charge than silicon dioxide.
The exact recipe for the new material has not been revealed but Intel says that it offers greater performance at such tiny scales.
Intel co-founder Gordon Moore has described the inclusion of hafnium as "one of the biggest transistor advancements in 40 years".
More (http://news.bbc.co.uk/2/hi/technology/7085480.stm)